MS01300 - SEMI MS13 - Guide for Use of Test Patterns for Characterizing a Deep Reactive Ion Etching (DRIE) Process Revision:SEMI MS13-0221 (Reapproved 0626) - Current 本仕様は，減衰型位相シフトマスク（ハーフトーン型位相シフトマスク ； 以下省略）およびマスクブランクスに特有な特性について記載する。

本仕様は，減衰型位相シフトマスク（ハーフトーン型位相シフトマスク ； 以下省略）およびマスクブランクスに特有な特性について記載する。

2-1224 (technical revision)

Alternative methods may also be used as long as they comply with SEMI C1 requirements for method validation

This Specification describes a common format

Such training tiers are used by technical training organizations/departments for developing training programs to instruct technicians and engineers to successfully operate

MS01300 - SEMI MS13 - Guide for Use of Test Patterns for Characterizing a Deep Reactive Ion Etching (DRIE) Process Revision:SEMI MS13-0221 (Reapproved 0626) - Current 本仕様は，減衰型位相シフトマスク（ハーフトーン型位相シフトマスク ； 以下省略）およびマスクブランクスに特有な特性について記載する。1 Purpose 1. 1 Deep reactive ion etching (DRIE) is widely used in MEMS fabrication processes for creating high aspect ratio anisotropic features. Further, the etch performance is dependent on open area (OA), that is, the amount of area subject to the etch process, which can range from 1% to 60%. It is also dependent on geometric pattern loading effects, the depth of the etch, the materials to be etched and their preparation. The optimal parameters