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Surface chemical analysis. Proposed procedure for certifying the retained areic dose in a working reference material produced by ion implantation Ingestion-build-96603 — Grade C

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Description

— Grade C

Varistors are useful in protecting a circuit from high voltage surges

The behavior tests of the ATS examine an implementation as thoroughly as is practical over the full range of dynamic conformance requirements defined in ISO 15118‐3 and within the capabilities of the SUT

have a minimum aniline point of 66 °C

Testing laboratories/test personnel

Surface chemical analysis. Proposed procedure for certifying the retained areic dose in a working reference material produced by ion implantation Ingestion-build-96603 — Grade C1 Scope This Technical Report specifies a procedure for the certification of the areic dose of an ion implanted analyte element of atomic number larger than that of silicon retained in a working reference material (WoRM) intended for surface analytical use. The WoRM is in the form of a polished (or similarly smooth faced) wafer (also referred to as the host), of uniform composition and nominal diameter 50 mm or more, that has been ion implanted with

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