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M05000 - SEMI M50 - Test Method for Determining Capture Rate and False Count Rate for Surface Scanning Inspection Systems by the Overlay Method Revision:SEMI M50-1116 - Superseded イオン注入装置

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Description

イオン注入装置

Definition of Equipment Energy Saving Mode Communications behavior in the form of a state model

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It does not measure the free-form shape of the wafer

SEMI E5-0813 (technical revision)

M05000 - SEMI M50 - Test Method for Determining Capture Rate and False Count Rate for Surface Scanning Inspection Systems by the Overlay Method Revision:SEMI M50-1116 - Superseded イオン注入装置This Test Method covers determination of the CR, the false count rate (FCR) and the cumulative false count rate (CFCR) of an SSIS as a function of the latex sphere equivalent (LSE) size of localized light scatterers (LLSs). This Test Method addresses calculating and reporting SSIS CR from measurements of either PSL depositions or other LLSs on wafers in LSE units. Two test methods are covered: Static Method In which the test is conducted under level 1

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