MF095000 - SEMI MF950 - Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching Revision:SEMI MF950-1107 (Reapproved 1023) - Current SEMI E40-0324 (technical revision)

SEMI E40-0324 (technical revision)

integrated circuits

Sori can significantly affect the yield of semiconductor device processing

This Standard specifies measurement methods

It describes an in-line

MF095000 - SEMI MF950 - Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching Revision:SEMI MF950-1107 (Reapproved 1023) - Current SEMI E40-0324 (technical revision)This Test Method covers a technique to measure the depth of damage, on or beneath the surface of silicon wafers prior to any heat treatment of the wafer. Such damage results from mechanical surface treatments such as sawing, lapping, grinding, sandblasting, and shot peening. The damage is revealed by a preferential etch that removes silicon in the region of the deformation. Preferential etching occurs because the chemical potential in the region of